ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The Hall mobility was studied in the n-CdxHg1−x Te crystals subjected to dynamic ultrasonic stressing (W US≤104 W/m2, f=5–7 MHz). It was found that, in field of the ultrasonic deformation, an increase in the carrier mobility in the impurity conduction region (T〈120 K) and a decrease in the intrinsic conduction region (T〉120 K) occurred in all tested samples. In this case, the magnitude of the sonic-stimulated variation in μH increases with decreasing structural perfection of a crystal. Different mechanisms of ultrasonic influence on μH with regard to scattering by optical phonons, ionized impurities, and alloy potential are analyzed, with the current flow conditions in the crystal taken into account. It is shown that, in the impurity conduction region, the main cause of the sonic-stimulated increase of the Hall mobility is the smoothing of the macroscopic intracrystalline potential that results from the inhomogeneity of the crystals. In the intrinsic conduction region, a decrease in mobility is caused by an increase in the intensity of scattering by the optical phonons.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1188046
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