In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 8B ( 2000-08-01), p. L844-
Abstract:
We report on the efficient photoluminescence (PL) of a-Si:H film prepared by reactive RF sputtering. The PL intensity and optical properties of the sputtered film depend on the input RF power. Stronger PL intensity at room temperature was observed for films deposited at low input RF power. The PL intensity of this film is stronger than that prepared by the plasma-enhanced chemical vapor deposition. The PL intensity did not correlate with the defect density but correlated with the number of SiH 2 units in the film. A considerable number of SiH 2 units in the film reduced transitions of electrons and/or holes to nonradiative centers.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.L844
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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