In:
International Journal of Modern Physics B, World Scientific Pub Co Pte Ltd, Vol. 16, No. 28n29 ( 2002-11-20), p. 4259-4262
Abstract:
High growth rate deposition of μ c - Si:H film with VHF-PECVD at low temperature has been reported. Investigations showed that growth rates enhanced with higher excitation frequency and working pressure, but increased at first then decreased with the increase of plasma power. Optical emission spectroscopy (OES) was introduced to monitor VHF plasma. The relationship between the growth rates and the OES results has been discussed. Raman spectra were also used to study the a - Si:H /μ c - Si:H phase transition. Finally a high growth rate of 2.0nm/s has been obtained through the initially optimized condition.
Type of Medium:
Online Resource
ISSN:
0217-9792
,
1793-6578
DOI:
10.1142/S0217979202015212
Language:
English
Publisher:
World Scientific Pub Co Pte Ltd
Publication Date:
2002
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