In:
International Journal of High Speed Electronics and Systems, World Scientific Pub Co Pte Ltd, Vol. 14, No. 03 ( 2004-09), p. 810-815
Abstract:
Field-plated structures can dramatically improve power capacity of GaN HEMT devices. In this paper, two different field-plated GaN HEMT structures will be demonstrated and compared to each other. The results show that a new GaN HEMT structure improves both power and noise performance without additional processing or costs.
Type of Medium:
Online Resource
ISSN:
0129-1564
,
1793-6438
DOI:
10.1142/S0129156404002879
Language:
English
Publisher:
World Scientific Pub Co Pte Ltd
Publication Date:
2004
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