In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 21, No. 3 ( 2003-05-01), p. 1129-1133
Abstract:
This work attempted to implant a Cu catalyst into a TaN (500 Å)/FSG (1200 Å)/Si assembly using a metal vapor vacuum arc ion implanter. The range of the copper dose was between 5.0×1015 and 1.0×1017 cm−2 and the accelerating voltage ranged from 30 to 50 kV. Both blanked and patterned specimens were subsequently deposited with an electroless-plated Cu film. The specimens as a whole were characterized by secondary ion mass spectrometer (SIMS), x-ray diffraction (XRD), and field emission scanning electron microscope (FESEM). The sheet resistance was measured by a four-point probe. A noticed relationship between SIMS depth profiles and the ion energy was established. The XRD spectra also showed that electroless-plated copper film possessed a strongly characteristic peak of Cu(111) preferred orientation. An excellent gap filling in a 0.2-μm-width (AR 7:1) trench/via was observed by FESEM. The sheet electric resistivity of the specimens was decreased to 1.93 μΩ cm after annealing at 500 °C for 1.5 h under an atmosphere of 10%H2–90%N2.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2003
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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