In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 53, No. 11 ( 2004), p. 3632-
Abstract:
This paper reports the study on p-n GaInP2/GaAs tandem cells. The cell samples were produced by metal-organic chemical vapor deposition at a low gas pressure. In order to optimize the device configuration, numerical modeling has been performed for the impacts of a fieldaided collection on the performances of the top cells. On the basis of modeling results, a modified configuration of top cells is introduced, using p+-p—n—n+ structure instead of p+n structure. This modification has brought about much improved photovoltaic performance of the top and tandem cells, with the conversion efficiency Eff=14.26% and 23.82% (AMO, 25℃, 2×2cm2), respectively.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
2004
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