In:
physica status solidi (b), Wiley, Vol. 241, No. 7 ( 2004-06), p. 1470-1476
Abstract:
Successful spin‐injection from magnetic contacts into a semiconductor heterostructure (up to room temperature) is seen as one of the key features to realise spintronic applications. In this paper we describe our effort in establishing spin‐injection in the tunneling regime from various different ferromagnetic contacts. The device structure that is used to test the spin‐injection is a III–V light emitting device. This device has good characteristics as a detector of the injected electron spin‐polarisation. We summarise the results on spin‐injection obtained from different magnetic contact strategies: ferromagnetic metal/AlO x , ferromagnetic metal/Schottky tunnel barrier and ferromagnetic semiconductor/Zener diode combination. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Type of Medium:
Online Resource
ISSN:
0370-1972
,
1521-3951
DOI:
10.1002/pssb.200304521
Language:
English
Publisher:
Wiley
Publication Date:
2004
detail.hit.zdb_id:
208851-4
detail.hit.zdb_id:
1481096-7
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