In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 4S ( 2001-04-01), p. 2837-
Abstract:
A simple and high-throughput process to fabricate a high-density buried nanopyramid array (BNPA) on a Si surface has been developed by means of dopant ion implantation and wet etching. In this process, the combination of two interesting etching phenomena was utilized to form the BNPA. One is the enhanced etching of ion-exposed SiO 2 in HF. The other is the newly found retarded etching of ion-exposed Si in hydrazine (N 2 H 4 ). A p-type Si(100) substrate with 27-nm-thick SiO 2 was exposed to 50-keV phosphorus ions with a dotted pattern. Then, the ion-exposed SiO 2 was selectively etched away by dipping in HF. Finally, the BNPA was formed under the patterned SiO 2 layer by dipping in hydrazine. By using this simple process, the BNPA with 250 nm pitch was successfully fabricated. The electrical property of the fabricated nanopyramid was also investigated using scanning Maxwell-stress microscopy (SMM).
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.2837
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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