In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 43, No. 4S ( 2004-04-01), p. 2008-
Abstract:
InGaN/GaN multiple-quantum well (MQW) structure was epitaxial growth by metal-organic chemical vapor deposition (MOCVD). Their MIS photodiodes with SiO 2 interlayer were fabricated successfully using photochemical vapor deposition. The normal undoped-GaN metal-semiconductor-metal (MSM) potodiodes were also prepared to compare with them. It was found that the minimum dark current of InGaN/GaN MQW photodiodes was 4.2×10 -13 A with 88 nm-thick SiO 2 layer under 5 V reverse bias voltage. Furthermore, it was found that we can significantly reduce the dark current of this photodiodes by inserting a thin SiO 2 interlayer in between metal electrode and the underneath InGaN/GaN MQW. With a 53 nm-thick SiO 2 interlayer, it was also found that we could achieve a high 1.53×10 3 photo current to dark current contrast.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.43.2008
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2004
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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