In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 12S ( 2000-12-01), p. 7007-
Abstract:
Effect of H 2 addition to C 2 F 6 plasma etching of SiO 2 aerogel film was examined for low- k dielectric application. In this experiment, H 2 plasma in itself was responsible for pore blocking and bond breaking of the SiO 2 aerogel. With increasing hydrogen from 0 to 50%, etch rate of SiO 2 aerogel was severely dropped at 20% of H 2 addition. According to the increase in H 2 addition, transition from fluorine-rich residue to carbon-rich one was gradually happened in SiO 2 aerogel. Surface microstructure of SiO 2 aerogel was so influenced with the increasing H 2 addition that they transformed to be planar by the interaction between residue/network and ion bombardment and the condensation reaction of surface chemicals with H 2 plasma.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.7007
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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