In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 11R ( 2000-11-01), p. 6170-
Abstract:
A metalorganic molecular beam epitaxy (MOMBE) system equipped with a radio frequency plasma cell was employed to grow GaN films at a low temperature of 650°C. The structural and optical properties of GaN films were studied by X-ray diffraction, scanning electron microscope, and photoluminescence (PL). The GaN films were epitaxially grown on the nitridated sapphire substrate with a wurtzitic single crystalline phase. The atomic nitrogen flux was found to be closely related to the GaN growth, particularly in the crystal quality of the GaN layers. An efficient emission line, which is associated with the recombination of the free-excitions, was observed at 10 K PL and a strong bandedge emission was also obtained even at room temperature PL.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.6170
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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