In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 3S ( 2001-03-01), p. 2069-
Abstract:
Scanning tunneling spectroscopy has been used to study quantum size effects on the electronic structure of InAs and In 0.46 Ga 0.54 As quantum dots (QDs) in correlation with their morphologies. It is found that for both samples, the measured band gap increases with decreasing dot height. The observed height dependence of the gap energy has been well reproduced by the calculation based on a one-dimensional quantum well model. For the In 0.46 Ga 0.54 As QD, however, enrichment of In-composition in the dot compared to the nominal composition has been observed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.2069
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink