In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 3R ( 2000-03-01), p. 1323-
Abstract:
By selectively seeding, polycrystalline diamond films have been patterned on mirror-polished Si substrate using hot-filament chemical vapor deposition. Results show high selectivity and high quality in patterned diamond films deposited at 0.05% CH 4 /H 2 concentration and at the growth rate of 2.6 µm/h. The selective area deposition (SAD) method is easy to be applied to a large and a different substrate.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.1323
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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