In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 4S ( 2000-04-01), p. 2208-
Abstract:
A new NAND-type electrical erasable programmable read only
memory (EEPROM), which employs (1) the novel in-cell temporary storage (ICTS) technique and (2) the novel multiple-wordline
parallel programming (MWPP) method, is proposed to reduce the unit cell size and decrease the overall programming time. The ICTS
approach latches input data directly to the selected EEPROM cells by an inverted channel with different input bitline voltages. After all
the selected cells are latched to individual data, the MWPP method simultaneously raises all selected wordlines to high voltage to
perform FN tunneling for parallel programming. The equivalent byte programming time is considerably reduced by employing parallel
programming. The high-speed and high-density features further reduce the EEPROM testing cost for manufacturers and save programming time
and cost for system providers.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.2208
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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