In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 43, No. 5R ( 2004-05-01), p. 2667-
Abstract:
RuO x films were deposited by liquid delivery metalorganic chemical vapor deposition method using a new Ru(C 8 H 13 O 2 ) 3 precursor for the advanced capacitor electrode in Gbit-scale dynamic random access memory. Deposition was carried out on a TiN barrier layer in the range of 250–400°C and the ratio of the O 2 flow rate to the total flow rate of Ar and O 2 was varied from 20 to 80%. RuO x thin films were annealed at 650°C for 1 min with Ar, N 2 or NH 3 ambient. Film characterization was performed in terms of resistivity, crystal structure, surface morphology, microstructure and film purity. The resistivity depended on the impurity, grain density and crystalline structure of the film. The oxygen used to form Ru the oxide was found to eliminate the carbon and hydrogen elements in an organic source. The O 2 flow ratio that changes the crystal structure of the films from Ru to RuO 2 was found to be 40%. The metallic Ru phase forming a RuO 2 /Ru bilayer at the RuO 2 /TiN interface was observed at O 2 flow ratios of 50% and 60%. The X-ray diffraction results indicate that the RuO 2 phase and the silicidation are not observed regardless of the ambient gases. Ar was more effective than N 2 and NH 3 as an ambient gas for the postannealing of the Ru films.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.43.2667
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2004
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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