In:
Applied Physics Letters, AIP Publishing, Vol. 85, No. 26 ( 2004-12-27), p. 6365-6367
Kurzfassung:
Lightly phosphorus-doped {111} homoepitaxial diamond films have been grown by microwave plasma-assisted chemical vapor deposition under optimized growth conditions. The Phosphorus concentration in the film can be controlled at a low doping level of the order of 1016cm−3. N-type conductivity of the films with phosphorus concentrations above 1×1016cm−3 is reproducibly confirmed by Hall-effect measurements in the temperature range from 300to873K. The highest value of the Hall mobility at room temperature is 660cm2∕Vs obtained for a film with a phosphorus concentration of 7×1016cm−3.
Materialart:
Online-Ressource
ISSN:
0003-6951
,
1077-3118
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
2004
ZDB Id:
211245-0
ZDB Id:
1469436-0
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