In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 4S ( 2000-04-01), p. 2318-
Abstract:
Hemispherical Si quantum dots have been self-assembled on
thermally grown 3.2-nm-thick SiO 2 /p-Si(100) by low-pressure
chemical vapor deposition of silane. The charging states of the Si quantum dots have been detected as surface potential changes by
using an atomic force microscopy/Kelvin force probe method. From the relationship between the measured surface potential changes and the
charging energy of a single dot, the number of electrons retained in a dot has been estimated to be one. Furthermore, it is found that
electron extraction from neutral dots can be achieved to create a hole at each dot.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.2318
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink