In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 2R ( 2000-02-01), p. 351-
Abstract:
Recrystallization of polycrystalline silicon (poly-Si) film by excimer laser
annealing (ELA) is discussed by considering the experimental results that the three stages of nucleation, textured grain growth and secondary grain growth were observed.
Although the phenomenon of nucleation in the amorphous silicon (a-Si) is understood by considering crystallization from the super cooled liquid, the growth mechanisms of the
textured grain and secondary grain are not understood by this, because the melting point of poly-Si which has already been formed on the entire surface during these
growth stages is higher than that of a-Si. The recrystallization mechanism considering the dislocation movement is introduced to investigate the present phenomenon. It also
clarifies the reason why secondary grain growth occurs under the critical conditions of laser irradiation energy and shot number. The feasibility of nucleation through the
super cooled liquid is also discussed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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