In:
Surface Review and Letters, World Scientific Pub Co Pte Ltd, Vol. 09, No. 01 ( 2002-02), p. 249-254
Abstract:
A natural application of the emerging technique of photoemission microscopy to the study of semiconductor interfaces involves measuring a device in cross section to directly determine heterojunction parameters. We present here results on p–n GaAs homojunctions, which served as a prototype system to demonstrate the applicability of this technique to buried semiconductor interfaces. We also describe preliminary measurements of the electrostatic potential profile across Al/GaAs Schottky junctions.
Type of Medium:
Online Resource
ISSN:
0218-625X
,
1793-6667
DOI:
10.1142/S0218625X02002154
Language:
English
Publisher:
World Scientific Pub Co Pte Ltd
Publication Date:
2002
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