In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 43, No. 8R ( 2004-08-01), p. 5506-
Abstract:
The BaTi 5 O 11 thin films were grown on the poly-Si/SiO 2 /Si substrate using rf magnetron sputtering and their structural and dielectric properties were investigated. The BaO–TiO 2 thin film deposited on the poly-Si substrate had an amorphous phase even though the growth temperature was high at 550°C. The crystalline BaTi 5 O 11 thin films were formed when the amorphous film was annealed above 800°C. The BaTi 5 O 11 phase was decomposed into Ba 4 Ti 13 O 30 , Ba 2 Ti 9 O 20 and TiO 2 phases as the films were annealed above 1100°C. The homogeneous BaTi 5 O 11 thin film was formed when the film was grown at 550°C and rapid thermal annealed at 900°C for 3 min. The interface between the BaTi 5 O 11 film and poly-Si substrate was sharp, and the inter-diffusions of the Si, Ba and Ti ions between the layers were negligible. The dielectric constant of the BaTi 5 O 11 film was about 35, which is close to that of the bulk BaTi 5 O 11 ceramics. The dissipation factor of all the films was smaller than 4.0%.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.43.5506
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2004
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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