In:
Modern Physics Letters B, World Scientific Pub Co Pte Ltd, Vol. 16, No. 15n16 ( 2002-07-10), p. 583-588
Kurzfassung:
MnSi 1.7 films were prepared by Solid Phase Reaction on Si(100) substrates under UHV conditions. Auger Electron Spectroscopy (AES) and X-ray diffraction (XRD) were used to study the composition and the structure of the MnSi x films. Compared with the reactive-deposited MnSi 1.7 films on silicon substrates, severe diffusion of manganese atoms into the silicon substrate during the thermal annealing process was observed. If the annealing process was not long enough, the phenomenon of coexistence of manganese-rich and silicon-rich silicides was found. The electrical resistivity of MnSi 1.7 films was measured in the temperature range of 30°C to 450°C. The resistivity increases gradually with temperature in the temperature range measured.
Materialart:
Online-Ressource
ISSN:
0217-9849
,
1793-6640
DOI:
10.1142/S0217984902004068
Sprache:
Englisch
Verlag:
World Scientific Pub Co Pte Ltd
Publikationsdatum:
2002
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