In:
Applied Physics Letters, AIP Publishing, Vol. 85, No. 3 ( 2004-07-19), p. 419-421
Abstract:
K-doped ZnO films were prepared on Al2O3(0001) substrates by solution deposition. For the prepared thin films of Zn1−xKxO (x=0.002, 0.01, 0.02, 0.05, 0.1), we carried out x-ray diffraction, transmittance spectroscopy, photoluminescence, Hall measurement and x-ray photoemission spectroscopy study, and found that properties like the crystallinity, optical band gap, carrier concentrations and chemical binding states changed at a K doping concentration of 2mol%. From these results, we suggest that the doped K in ZnO films processed by the sol–gel method plays a different role at K doping concentrations below 2mol% and above 2mol%.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2004
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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