In:
Science, American Association for the Advancement of Science (AAAS), Vol. 292, No. 5521 ( 2001-05-25), p. 1521-1523
Abstract:
We fabricated high-quality c axis–oriented epitaxial MgB 2 thin films using a pulsed laser deposition technique. The thin films grown on (1 1̄ 0 2) Al 2 O 3 substrates have a transition temperature of 39 kelvin. The critical current density in zero field is ∼6 × 10 6 amperes per cubic centimeter at 5 kelvin and ∼3 × 10 5 amperes per cubic centimeter at 35 kelvin, which suggests that this compound has potential for electronic device applications, such as microwave devices and superconducting quantum interference devices. For the films deposited on Al 2 O 3 , x-ray diffraction patterns indicate a highly c axis–oriented crystal structure perpendicular to the substrate surface.
Type of Medium:
Online Resource
ISSN:
0036-8075
,
1095-9203
DOI:
10.1126/science.1060822
Language:
English
Publisher:
American Association for the Advancement of Science (AAAS)
Publication Date:
2001
detail.hit.zdb_id:
128410-1
detail.hit.zdb_id:
2066996-3
detail.hit.zdb_id:
2060783-0
SSG:
11
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