In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 449-452 ( 2004-03-15), p. 465-468
Abstract:
c-BN film was synthesized using ME-ARE on Si substrate. The deposition process was optimized via the Taguchi method. The optimized conditions were as follows: substrate temperature, anode (plasma) current, Ar/N2 ratio, pulse frequency, duty frequency, bias voltage and deposition time were 500°C, 15A, 3, 1 kHz, 50%, -130V and 15 min, respectively. The crosssectional TEM observation revealed that the c-BN films with a thickness of 100nm ~300nm were composed of two layers, a columnar h-BN layer with a thickness of 30nm~40 nm normal to Si substrate and a c-BN structure.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.449-452
DOI:
10.4028/www.scientific.net/MSF.449-452.465
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2004
detail.hit.zdb_id:
2047372-2
Permalink