In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. S1 ( 2000-01-01), p. 366-
Abstract:
A new high-performance Ga 0.51 In 0.49 P/In 0.15 Ga 0.85 As pseudomorphic heterostructure field-effect transistor (PHFET), based on a novel airbridge-gate structure with multiple piers, has been studied. Due to the employment of high Schottky barrier GalnP layer and the newly designed double delta-doped sheets (D 3 S) InGaAs channel, the high gate-to-drain breakdown voltage and broad and linear transconductance are obtained simultaneously. Also, the use of airbridge-gate technique may improve the DC and RF characteristics of device by suppressing the gate leakage current and reducing the parasitic capacitance.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAPS.39S1.366
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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