In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 1A ( 2000-01-01), p. L19-
Abstract:
A novel two-step rapid thermal annealing (RTA) process has been
developed to significantly reduce the crystallization time for the solid-phase crystallization (SPC) of amorphous silicon films. In
comparison with the conventional SPC processes, it not only keeps a low thermal budget but also achieves a larger poly-Si film grain
size than that obtained by one-step RTA, and even as large as that obtained by conventional furnace annealing (CFA). Furthermore,
poly-Si thin-film transistors fabricated by such a novel annealing scheme possess electrical characteristics superior to those obtained
by one-step RTA and comparable to those obtained by long-time CFA.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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