In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 7R ( 2000-07-01), p. 4053-
Abstract:
The dielectric breakdown of oxides with various thickness between 5–70 nm on Czochralski (CZ)-grown silicon wafer had been investigated. To observe the effects of crystal-originated-particle (COP), vacancy-rich wafers and COP-free wafers were compared. In breakdown voltage (BV) measurement, breakdown fractions of vacancy-rich wafers were increased with the increase of oxide thickness ( t OX ) and showed a maximum value at the t OX range of 10–20 nm. On the other hand, COP-free wafers showed few breakdowns over all the range of t OX . Furthermore, time dependent dielectric breakdown (TDDB) of the vacancy-rich wafers showed higher extrinsic breakdowns than that of the COP-free wafers in the t OX below 20 nm. For the intrinsic breakdown, two groups showed the same charge-to-breakdown ( Q BD ) along the strength of injection current over all the range of t OX . Especially, only in case of vacancy-rich wafer, abnormal increase of current, i.e., hump phenomena, was observed in the range of electric field below the Fowler-Nordheim (F-N) tunneling.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.4053
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
2006801-3
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