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  • 1
    Online Resource
    Online Resource
    Silicon Epitaxy. (2001)
    San Diego :Elsevier Science & Technology,
    Details
    Keywords: Silicon -- Electric properties. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (514 pages)
    Edition: 1st ed.
    ISBN: 9780080541006
    Series Statement: Issn Series
    URL: https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=311387
    Language: English
    Note: Front Cover -- Silicon Epitaxy: Semiconductors and Semimetals -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. CVD Technologies For Silicon: A Quick Survey -- Abbreviations Used -- I. Introduction -- II. Bulk Polycrystalline Silicon Processes -- III. Film Deposition: Reactors -- IV. Film Deposition: Products and Chemistries -- V. Aerosol CVD -- VI. Conclusions -- References -- Chapter 2. Epitaxial Growth Theory: Vapor-phase and Surface Chemistry -- I. Introduction -- II. Development of a Detailed Kinetic Scheme -- III. Gas-phase Kinetics for Silanes and Chlorosilanes -- IV. Surface Kinetics for Silanes and Chlorosilanes -- V. Gas-phase Precursors to Deposition and Overall Kinetic Scheme -- VI. Overall Kinetic Scheme and Concluding Remarks -- References -- Chapter 3. Epitaxial Growth Facilities, Equipment, and Supplies -- Abbreviations Used -- I. Introduction -- II. The Epitaxial Reactor -- III. Facilities -- IV. Process Gas and Delivery -- V. Exhaust Treatment -- VI. Equipment for Power Epitaxy -- VII. Advanced Applications -- VIII. Conclusion -- References -- Chapter 4. Epitaxial Growth Techniques: Low-temperature Epitaxy -- Abbreviations Used -- I. Introduction -- II. CVD Machines -- III. Surface Treatment -- IV. Epitaxial Growth Mechanisms -- V. High-quality Si/Si1-x Gex/Si Heterostructure Growth at High Ge Fractions -- VI. Conclusions -- References -- Chapter 5. Epitaxial Growth Techniques: Molecular Beam Epitaxy -- Abbreviations Used -- I. Introduction -- II. MBE Machines -- III. Surface Treatment -- IV. Growth Mechanisms -- V. Doping -- VI. Growth of SiGe(C) Alloys -- VII. Formation of Si/Ge Heterostructures -- VIII. Growth of SiGe Buffer Layers -- IX. Selective Growth -- X. Formation of Superlattices, Quantum Wires, and Quantum Dots -- XI. Conclusion -- References -- Chapter 6. Epitaxial Growth Modeling. , Nomenclature -- I. Introduction -- II. Detailed Modeling of Epitaxial Reactors -- III. Reduced-order Models for Epitaxial Silicon Deposition -- IV. Atomistic Aspects: Control of Crystal Morphology -- V. Summary -- References -- Chapter 7. Epitaxiai Layer Characterization and Metrology -- Abbreviations Used -- I. Introduction -- II. On Sampling and Accuracy -- III. Doping Control -- IV. Thickness Measurements -- V. Contamination and Surface Quality -- VI. Future Developments and Conclusions -- References -- Chapter 8. Epitaxy for Discrete and Power Devices -- Nomenclature -- I. Introduction -- II. General Considerations -- III. Specific Epitaxy Processes for Power and Discrete Devices -- IV. Defects and Problems -- V. Accessory Considerations -- Chapter 9. Epitaxy on Patterned Wafers -- I. Introduction -- II. Device Requirements and Process Complexity -- III. Surface Preparation: Pre-epitaxial Cleaning -- IV. Geometrical Pattern Integrity -- V. Doping Pattern Integrity -- VI. Crystal Defectivity -- VII. Conclusion: The Best Epitaxial Recipe? -- Bibliography -- Chapter 10. Si-based Alloys: SiGe and SiGe:C -- I. Introduction -- II. Applications of Si Alloys -- III. Low-temperature Surface Preparation -- IV. Process Chemistry for Si Alloy Deposition -- V. Metrology of Si1-x Gex Layers -- VI. Production Robust Si1-x Gex Processing -- VII. Summary -- References -- Chapter 11. Silicon Epitaxy: New Applications -- I. Introduction -- II. Equipment: State of the Art -- III. Epitaxy Processes -- IV. New Applications -- V. Conclusion -- References -- Index -- Contents of Volumes In This Series -- Color Plate Section.
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  • 2
    Online Resource
    Online Resource
    Processing and Properties of Compound Semiconductors. (2001)
    San Diego :Elsevier Science & Technology,
    Details
    Keywords: Compound semiconductors. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (333 pages)
    Edition: 1st ed.
    ISBN: 9780080541013
    Series Statement: Issn Series
    URL: https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=317071
    Language: English
    Note: Front Cover -- Processing and Properties of Compound Semiconductors: Semiconductors and Semimetals -- Copyright Page -- Contents -- List of Contributors -- Chapter 1. Introduction -- 1. Introduction -- 2. Wet Etching -- References -- Chapter 2. Gallium Arsenide Heterostructures -- 1. Introduction -- 2. Crystal Growth and Properties of GaAs -- 3. Growth and Material Properties of GaAs Heterostructures -- 4. Physical Properties of GaAs-Based Quantum Well Structures and Superlattices -- References -- Chapter 3. Growth and Optical Properties of GaN -- 1. Introduction -- 2. Gallium Nitride and its Growth on Different Substrates -- 3. Line Width and Quantum Beats in GaN -- 4. Time-Resolved Spectroscopy of GaN Epilayers -- 5. p-GaN -- 6. n-GaN -- 7. Optical Pumping and Lasing in GaN Epilayers and Heterostructures -- 8. GaN Quantum Wells -- References -- Chapter 4. SiGe/Si Processing -- 1. Introduction -- 2. SiGe/Si Material Properties and Processing Challenges -- References -- Chapter 5. Advances in Quantum Dot Structures -- 1. Introduction -- 2. Physical Properties -- 3. State of the Art -- References -- Chapter 6. Wet Etching of III-V Semiconductors -- 1. Introduction -- 2. Semiconductor Electrochemistry: Basic Principles and Experimental Methods -- 3. Types of Etching Reactions -- 4. Some Solid-State and Electrochemical Data on III-V Semiconductors -- 5. Kinetics and Mechanisms of Etching Reactions at III-V Semiconductors -- 6. Material-Selective Etching -- 7. Etch Morphologies and Profiles -- 8. Conclusions -- References -- Index -- Contents of Volumes in This Series.
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  • 3
    Online Resource
    Online Resource
    Essential Mathematical Methods for Physicists, ISE. (2003)
    San Diego :Elsevier Science & Technology,
    Details
    Keywords: Mathematical physics. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (959 pages)
    Edition: 1st ed.
    ISBN: 9780080469850
    URL: https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=286681
    Language: English
    Note: Cover -- Inside front cover -- Contents -- Preface -- 1 Vector Analysis -- 2 Vector Analysis in Curved Coordinates and Tensors -- 3 Determinants and Matrices -- 4 Group Theory -- 5 Infinite Series -- 6 Functions of a Complex Variable I: Analytic Properties Mapping -- 7 Functions of a Complex Variable II: Calculus of Residues -- 8 Differential Equations -- 9 Sturm-Liouville Theory-Orthogonal Functions -- 10 The Gamma Function (Factorial Function) -- 11 Legendre Polynomials and Spherical Harmonics -- 12 Bessel Functions -- 13 Hermitie and Laguerre Polynomials -- 14 Fourier Series -- 15 Integral Transforms -- 16 Partial Differential Equations -- 17 Probability -- 18 Calculus of Variations -- 19 Nonlinear Methods and Chaos -- Appendix 1 Real Zeros of a Function -- Index -- Inside back cover.
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  • 4
    Online Resource
    Online Resource
    Ultrafast Physical Processes in Semiconductors. (2000)
    San Diego :Elsevier Science & Technology,
    Details
    Keywords: Picosecond pulses. ; Semiconductors. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (483 pages)
    Edition: 1st ed.
    ISBN: 9780080540955
    Series Statement: Issn Series
    URL: https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=312773
    DDC: 537.622
    Language: English
    Note: Front Cover -- Ultrafast Physical Processes in Semiconductors -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. Ultrafast Electron-Phonon Interactions in Semiconductors: Quantum Kinetic Memory Effects -- I. Introduction -- II. General Considerations -- III. Experimental Technique -- IV. Results and Discussion -- V. Conclusion -- References -- Chapter 2. Spatially and Temporally Resolved Near-Field Scanning Optical Microscopy Studies of Semiconductor Quantum Wires -- I. Introduction -- II. Semiconductor Nanostructures -- III. Near-Field Scanning Optical Microscopy -- IV. Stationary Near-Field Spectroscopy of Semiconductor Nanostructures -- V. Time-Resolved Near-Field Spectroscopy -- VI. Outlook and Conclusions -- References -- Chapter 3. Ultrafast Dynamics in Wide Bandgap Wurtzite GaN -- I. Introduction -- II. Raman Spectroscopy in Semiconductors -- III. Samples, Experimental Setup, and Approach -- IV. Phonon Modes in the Wurtzite Structure GaN -- V. Experimental Results -- VI. Conclusions and Future Experiments -- References -- Chapter 4. Ultrafast Dynamics and Phase Changes in Highly Excited GaAs -- I. Introduction -- II. Measuring Ultrafast Phenomena with Light -- III. Dynamics of Electrons and Atoms from Femtoseconds to Microseconds -- IV. Measuring the Time-Resolved Dielectric Function -- V. Time-Resolved Dielectric Function of Highly Excited GaAs -- VI. Carrier and Lattice Dynamics -- VII. Conclusions -- References -- Chapter 5. Quantum Kinetics for Femtosecond Spectroscopy in Semiconductors -- I. Introduction -- II. Semiconductor Bloch Equations for Pulse Excitation with Quantum Kinetic Scattering Integrals -- III. Low-Excitation Femtosecond Spectroscopy -- IV. Femtosecond DTS for Screened Coulomb and LO-Phonon Quantum Kinetic Scattering. , V. Resonant FWM with Screened Coulomb and LO-Phonon Quantum Kinetic Scattering -- References -- Chapter 6. Coulomb Correlation Signatures in the Excitonic Optical Nonlinearities of Semiconductors -- I. Introduction -- II. Theoretical Approach and Model -- III. Applications to Pump-Probe Spectroscopy -- IV. Absorption Changes Induced by Incoherent Occupations -- V. Applications to Four-Wave-Mixing Spectroscopy -- VI. Summary -- VII. Outlook -- References -- Chapter 7. Electronic and Structural Response of Materials to Fast, Intense Laser Pulses -- I. Introduction -- II. Tight-Binding Electron-Ion Dynamics -- III. ε (ω ) and χ(2) as Signatures of a Nonthermal Phase Transition -- IV. Detailed Information from Microscopic Simulations -- V. Formula for the Second-Order Susceptibility χ(2) -- VI. Response of Si to Fast, Intense Pulses -- VII. Density Functional Simulation for Si -- VIII. Response of C60 to Ultrafast Pulses of Low, High, and Very High Intensity -- IX. The Simplest System, H2+ -- X. Biological Molecules -- XI. Conclusion -- References -- Chapter 8. Coherent THz Emission in Semiconductors -- I. Introduction -- II. Principles of Pulsed THz Emission and Detection -- III. Macroscopic Currents and Polarizations -- IV. Coherent Charge Oscillations -- V. THz Emission from Quantum Structures -- VI. Applications in Semiconductor Spectroscopy -- VII. Conclusions -- References -- Index -- Contents of Volumes in This Series.
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  • 5
    Electronic Resource
    Electronic Resource
    Influence of High-Pass Filtering on Noncontact Mapping and Ablation of Atrial Tachycardias (2004)
    350 Main Street , Malden , MA 02148-5018 , USA and 9600 Garsington Road , Oxford OX4 2DQ , UK . : Blackwell Futura Publishing, Inc.
    Pacing and clinical electrophysiology 27 (2004), S. 0 
    Details
    ISSN: 1540-8159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The aim of the study was to define the impact of different high-pass filter settings (HPF) on the accuracy of mapping of ectopic atrial tachycardias (EAT) using a noncontact mapping (NCM) system. In 20 patients with 22 EAT a noncontact probe was deployed in the right (n = 19) or in the left atrium (n = 3). The device enables interpolation and analysis of unipolar electrograms. It provides information on focus localization and signal morphology. These parameters were compared in different HPF of 0.5 Hz, 2 Hz, 8 Hz, and 16 Hz. The NCM signal morphology was preserved at all HPF. An initial negative deflection recorded by NCM system showed a positive predictive value of 93% regarding the ablation success. The deviation (spatial disparity) between visualized focus origin and successful ablation site was 6.9 ± 5.4 mm. Between two consecutive filter settings, the focus shift was more pronounced between 0.5 and 2 Hz (5.4 ± 4.5 mm) compared to a setting between 8 and 16 Hz (2.9 ± 2.9 mm; P 〈 0.05). Successful ablation was achieved in 15/18 right atrial tachycardias (83%) and in 2/3 left atrial arrhythmias. Different HPF influence NCM spatial analysis of EAT. However, a small variability in foci localization does not impact final ablation results. (PACE 2004; 27:38–46)
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1540-8159.2004.00383.x
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  • 6
    Electronic Resource
    Electronic Resource
    High Incidence of Sudden Death with Conduction System and Myocardial Disease Due to Lamins A and C Gene Mutation (2000)
    Oxford, UK : Blackwell Futura Publishing, Inc.
    Pacing and clinical electrophysiology 23 (2000), S. 0 
    Details
    ISSN: 1540-8159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: BÉCANE, H.–M., et al.: High Incidence of Sudden Death with Conduction System and Myocardial Disease Due to Lamins A and C Gene Mutation. We studied 54 living relatives from a large French kindred, among which 17 members presented with a cardiomyopathy transmitted on an autosomal dominant mode. Five of these individuals had clinical manifestations of muscle disease phenotypically consistent with Emery-Dreifuss muscular dystrophy. Genetic analysis of this kindred had demonstrated a nonsense mutation in the LMNA gene located on chromosome 1q11–q23. This gene encodes lamins A and C, proteins of the nuclear lamina located on the inner face of the nuclear envelope. We retrospectively determined the cause of death of 15 deceased family members, 8 of whom had died suddenly, 2 as a first and single manifestation of the disease. The six other cases had histories of arrhythmias and left ventricular dysfunction before dying suddenly, and three of them died despite the prior implantation of a permanent pacemaker. The mean age of onset of cardiac symptoms among affected living family members was 33 years (range 15–47 years), and the first symptoms were due to marked atrioventricular conduction defects or sinus dysfunction, requiring the implantation of permanent pacemakers in seven cases. Myocardial dysfunction accompanied by ventricular arrhythmias developed rapidly in the course of the disease and resulted in severe dilated cardiomyopathy requiring cardiac transplantation in three cases. In conclusion, in patients presenting a life-threatening familial or sporadic cardiac restricted phenotype similar to that described here, mutations in the lamins A and C gene should be looked for. In the genotypically affected individuals, cardiological and electrophysiological follow-up should be performed to prevent sudden death that could occur rapidly in the evolution of such disease.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1460-9592.2000.01661.x
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  • 7
    Electronic Resource
    Electronic Resource
    Prevalence of T Wave Alternans in Healthy Subjects (2003)
    350 Main Street , Malden , MA 02148-5018 , U.S.A . : Blackwell Futura Publishing, Inc.
    Pacing and clinical electrophysiology 26 (2003), S. 0 
    Details
    ISSN: 1540-8159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: WEBER, S., et al .: Prevalence of T Wave Alternans in Healthy Subjects. Beat-to-beat variations in the amplitude of the T wave (T wave alternans [TWA]) have been associated with malignant ventricular arrhythmias in patients with structural heart disease. TWA has also been observed sporadically in healthy persons during strenuous exercise. Therefore, it was the aim of this study to investigate the prevalence of TWA in healthy subjects at rest and during exercise. TWA was assessed in 48 healthy volunteers with a mean age of 30 ± 8 years (21–53 years) using the CH2000 system for measurement of microvolt level TWA. TWA was not observed in any individual at rest. Short transient intervals of TWA were observed during exercise in five (10.4%) subjects. Sustained TWA was observed in two (4.2%) individuals. In one of these two individuals sustained TWA was recorded at heart rates 〉110 beats/min. In the other TWA was observed at an onset heart rate of 〈110 beats/min, and therefore, was considered alternans positive. The prevalence of exercise related sustained TWA in healthy, young individuals is low (2.1%). Short transient intervals of TWA were observed in about 10% of healthy volunteers. These transient episodes of TWA had no clinical impact with respect to a higher vulnerability to ventricular arrhythmias. (PACE 2003; 26[Pt. I]:49–52)
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1460-9592.2003.00149.x
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  • 8
    Electronic Resource
    Electronic Resource
    Incidence of T Wave Alternation After Acute Myocardial Infarction and Correlation with Other Prognostic Parameters: Results of a Prospective Study (2001)
    Oxford, UK : Blackwell Futura Publishing, Inc.
    Pacing and clinical electrophysiology 24 (2001), S. 0 
    Details
    ISSN: 1540-8159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: SCHWAB, J.O., et al.: Incidence of T Wave Alternation After Acute Myocardial Infarction and Correlation with Other Prognostic Parameters: Results of a Prospective Study. Tachycardia induced alternation of the T wave (TWA) has been associated with arrhythmia morbidity in mixed patient populations. However, less is known concerning the general incidence of TWA and its usefulness in risk stratification early after acute myocardial infarction (MI). TWA was prospectively and systematically assessed in 140 consecutive patients 15 ± 6 days after acute MI and prior to discharge. Results of TWA measurements were compared to other noninvasive risk markers, LV function, and coronary angiography. Sustained TWA was present at rest or inducible during exercise in 27% of patients. The patient-specific heart rate for the onset of TWA was 98 ± 9 beats/min. After multivariate analysis, TWA correlated with age (P = 0.02) and LV function (P = 0.002) and occurred more often in patients after nonanterior MI (P = 0.03). Acute results of Holter monitoring, late potentials by signal-averaged ECG, and heart rate variability were unrelated to the TWA status. During follow-up (451 ± 210 days) two major arrhythmic events occurred. The incidence of TWA early after MI is about 25%. TWA is related to age and LV function but not to other common arrhythmia markers. Although TWA does not appear to be related to excessive cardiac morbidity, evaluation of the prognostic significance of TWA requires further study.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1460-9592.2001.00957.x
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of Ventricular Fibrillation Duration on the Defibrillation Threshold in Humans (2002)
    Oxford, UK : Blackwell Futura Publishing, Inc.
    Pacing and clinical electrophysiology 25 (2002), S. 0 
    Details
    ISSN: 1540-8159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: GRADAUS, R., et al.: Effect of Ventricular Fibrillation Duration on the Defibrillation Threshold in Humans. Early during ventricular fibrillation, the defibrillation threshold may be low, as ventricular fibrillation most probably arises from a localized area with only a few wavefronts and the effects of global ischemia, ventricular dilatation, and sympathetic discharge have not yet fully developed. The purpose of this study was to explore the effect of the timing of shock delivery in humans. During implantation of an ICD in 26 patients (24 men, 60 ± 11 years, 19 coronary artery disease, NYHA 2.2 ± 0.4, left ventricular ejection fraction 0.42 ± 0.16), the defibrillation threshold was determined after approximately 10 and 2 seconds of ventricular fibrillation. Ventricular fibrillation was induced by T wave shocks. Mean defibrillation threshold was 9.9 ± 3.6 J after 10.3 ± 1.0 seconds. Within 2 seconds, 20 of 26 patients could be successfully defibrillated with ≤ 8 J. In these patients, the mean defibrillation threshold was 4.0 ± 2.1 J after 1.4 ± 0.3 seconds compared to 9.5 ± 3.1 J after 10.2 ± 1.1 seconds (P 〈 0.001). There were no clinical differences between patients who could be successfully defibrillated within 2 seconds and those patients without successful defibrillation within 2 seconds. In the majority of patients, the defibrillation threshold was significantly lower within the first few cycles of ventricular fibrillation than after 10 seconds of ventricular fibrillation. These results should lead to exploration of earlier shock delivery in implantable devices. This could possibly reduce the incidence of syncope in patients with rapid ventricular tachyarrhythmias and ICDs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1460-9592.2002.00014.x
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  • 10
    Electronic Resource
    Electronic Resource
    Antitachycardia Pacing for Rapid VT During ICD Charging: A Method to Prevent ICD Shocks (2001)
    Oxford, UK : Blackwell Futura Publishing, Inc.
    Pacing and clinical electrophysiology 24 (2001), S. 0 
    Details
    ISSN: 1540-8159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: WEBER, M., et al.: Antitachycardia Pacing for Rapid VT During ICD Charging: A Method to Prevent ICD Shocks. In patients with ICDs, rapid VTs are usually treated with shocks. It is unknown, if antitachycardia pacing (ATP) delivered once for rapid VT during capacitor charging can avoid painful shocks without increasing the risk of syncope. In patients in whom rapid monomorphic VT (cycle length 300–220 ms) could be reproducibly induced during predischarge ICD testing, the success of cardioversion (defibrillation threshold plus 10 J) and a single ATP attempt (burst with 8 or 16 stimuli) was compared using a randomized crossover study design. Consciousness of the patients was checked by the signal from a button constantly pushed by the patient. In 20 patients (ejection fraction 0.50 ± 0.19) rapid VTs (253 ± 26 ms) were reproducibly induced. A single burst successfully terminated 11 (55%) of 20 rapid VTs, 6 episodes could not be terminated with a single burst pacing and 3 VTs accelerated. Rapid VTs not terminated by ATP were significantly faster than those that could be terminated (246 vs 258 ms, P = 0.026). Cardioversion (19 ± 3 J) terminated the VTs in all cases. No patient suffered syncope during rapid VTs. A single ATP may terminate rapid VT with cycle lengths 〈 300 ms in 55% of patients without increasing the risk of syncope. Therefore, in rapid VTs one attempt of ATP may be suitable as an additional therapy option during ICD capacitor charging to avoid painful shocks without compromise of safety. Thus, future ICDs should implement the option of ATP during charging of capacitors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1460-9592.2001.00345.x
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