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  • 1
    Online Resource
    Online Resource
    San Diego :Elsevier Science & Technology,
    Keywords: Silicon -- Electric properties. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (514 pages)
    Edition: 1st ed.
    ISBN: 9780080541006
    Series Statement: Issn Series
    Language: English
    Note: Front Cover -- Silicon Epitaxy: Semiconductors and Semimetals -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. CVD Technologies For Silicon: A Quick Survey -- Abbreviations Used -- I. Introduction -- II. Bulk Polycrystalline Silicon Processes -- III. Film Deposition: Reactors -- IV. Film Deposition: Products and Chemistries -- V. Aerosol CVD -- VI. Conclusions -- References -- Chapter 2. Epitaxial Growth Theory: Vapor-phase and Surface Chemistry -- I. Introduction -- II. Development of a Detailed Kinetic Scheme -- III. Gas-phase Kinetics for Silanes and Chlorosilanes -- IV. Surface Kinetics for Silanes and Chlorosilanes -- V. Gas-phase Precursors to Deposition and Overall Kinetic Scheme -- VI. Overall Kinetic Scheme and Concluding Remarks -- References -- Chapter 3. Epitaxial Growth Facilities, Equipment, and Supplies -- Abbreviations Used -- I. Introduction -- II. The Epitaxial Reactor -- III. Facilities -- IV. Process Gas and Delivery -- V. Exhaust Treatment -- VI. Equipment for Power Epitaxy -- VII. Advanced Applications -- VIII. Conclusion -- References -- Chapter 4. Epitaxial Growth Techniques: Low-temperature Epitaxy -- Abbreviations Used -- I. Introduction -- II. CVD Machines -- III. Surface Treatment -- IV. Epitaxial Growth Mechanisms -- V. High-quality Si/Si1-x Gex/Si Heterostructure Growth at High Ge Fractions -- VI. Conclusions -- References -- Chapter 5. Epitaxial Growth Techniques: Molecular Beam Epitaxy -- Abbreviations Used -- I. Introduction -- II. MBE Machines -- III. Surface Treatment -- IV. Growth Mechanisms -- V. Doping -- VI. Growth of SiGe(C) Alloys -- VII. Formation of Si/Ge Heterostructures -- VIII. Growth of SiGe Buffer Layers -- IX. Selective Growth -- X. Formation of Superlattices, Quantum Wires, and Quantum Dots -- XI. Conclusion -- References -- Chapter 6. Epitaxial Growth Modeling. , Nomenclature -- I. Introduction -- II. Detailed Modeling of Epitaxial Reactors -- III. Reduced-order Models for Epitaxial Silicon Deposition -- IV. Atomistic Aspects: Control of Crystal Morphology -- V. Summary -- References -- Chapter 7. Epitaxiai Layer Characterization and Metrology -- Abbreviations Used -- I. Introduction -- II. On Sampling and Accuracy -- III. Doping Control -- IV. Thickness Measurements -- V. Contamination and Surface Quality -- VI. Future Developments and Conclusions -- References -- Chapter 8. Epitaxy for Discrete and Power Devices -- Nomenclature -- I. Introduction -- II. General Considerations -- III. Specific Epitaxy Processes for Power and Discrete Devices -- IV. Defects and Problems -- V. Accessory Considerations -- Chapter 9. Epitaxy on Patterned Wafers -- I. Introduction -- II. Device Requirements and Process Complexity -- III. Surface Preparation: Pre-epitaxial Cleaning -- IV. Geometrical Pattern Integrity -- V. Doping Pattern Integrity -- VI. Crystal Defectivity -- VII. Conclusion: The Best Epitaxial Recipe? -- Bibliography -- Chapter 10. Si-based Alloys: SiGe and SiGe:C -- I. Introduction -- II. Applications of Si Alloys -- III. Low-temperature Surface Preparation -- IV. Process Chemistry for Si Alloy Deposition -- V. Metrology of Si1-x Gex Layers -- VI. Production Robust Si1-x Gex Processing -- VII. Summary -- References -- Chapter 11. Silicon Epitaxy: New Applications -- I. Introduction -- II. Equipment: State of the Art -- III. Epitaxy Processes -- IV. New Applications -- V. Conclusion -- References -- Index -- Contents of Volumes In This Series -- Color Plate Section.
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  • 2
    Online Resource
    Online Resource
    San Diego :Elsevier Science & Technology,
    Keywords: Compound semiconductors. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (333 pages)
    Edition: 1st ed.
    ISBN: 9780080541013
    Series Statement: Issn Series
    Language: English
    Note: Front Cover -- Processing and Properties of Compound Semiconductors: Semiconductors and Semimetals -- Copyright Page -- Contents -- List of Contributors -- Chapter 1. Introduction -- 1. Introduction -- 2. Wet Etching -- References -- Chapter 2. Gallium Arsenide Heterostructures -- 1. Introduction -- 2. Crystal Growth and Properties of GaAs -- 3. Growth and Material Properties of GaAs Heterostructures -- 4. Physical Properties of GaAs-Based Quantum Well Structures and Superlattices -- References -- Chapter 3. Growth and Optical Properties of GaN -- 1. Introduction -- 2. Gallium Nitride and its Growth on Different Substrates -- 3. Line Width and Quantum Beats in GaN -- 4. Time-Resolved Spectroscopy of GaN Epilayers -- 5. p-GaN -- 6. n-GaN -- 7. Optical Pumping and Lasing in GaN Epilayers and Heterostructures -- 8. GaN Quantum Wells -- References -- Chapter 4. SiGe/Si Processing -- 1. Introduction -- 2. SiGe/Si Material Properties and Processing Challenges -- References -- Chapter 5. Advances in Quantum Dot Structures -- 1. Introduction -- 2. Physical Properties -- 3. State of the Art -- References -- Chapter 6. Wet Etching of III-V Semiconductors -- 1. Introduction -- 2. Semiconductor Electrochemistry: Basic Principles and Experimental Methods -- 3. Types of Etching Reactions -- 4. Some Solid-State and Electrochemical Data on III-V Semiconductors -- 5. Kinetics and Mechanisms of Etching Reactions at III-V Semiconductors -- 6. Material-Selective Etching -- 7. Etch Morphologies and Profiles -- 8. Conclusions -- References -- Index -- Contents of Volumes in This Series.
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  • 3
    Online Resource
    Online Resource
    Berlin-Dahlem : ZIB
    Keywords: Forschungsbericht ; Hochschulschrift
    Description / Table of Contents: The problem of clustering data can often be transformed into the problem of finding a hidden block diagonal structure in a stochastic matrix. Deuflhard et al. have proposed an algorithm that state s the number of clusters and uses the sign structure of eigenvectors of the stochastic matrix to solve the cluster problem. Recently Weber and Galliat discovered that this system of eigenvectors can easily be transformed into a system of membership functions or soft characteristic functions describing the clusters. In this article we explain the corresponding cluster algorithm and point out the underlying theory. By means of numerical examples we explain how the grade of membership can be interpreted.
    Type of Medium: Online Resource
    Pages: Online-Ressource (11 S., 268,5 KB)
    Series Statement: ZIB-report 2003, 4
    Language: English
    Note: Unterschiede zwischen dem gedruckten Dokument und der elektronischen Ressource können nicht ausgeschlossen werden , Auch als gedr. Ausg. vorhanden , Systemvoraussetzungen: Acrobat reader.
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  • 4
    Online Resource
    Online Resource
    Berlin-Dahlem : ZIB
    Keywords: Hochschulschrift ; Forschungsbericht
    Description / Table of Contents: The key to molecular conformation dynamics is the direct identification of metastable conformations, which are almost invariant sets of molecular dynamical systems. Once some reversible Markov operator has been discretized, a generalized symmetric stochastic matrix arises. This matrix can be treated by Perron cluster analysis, a rather recent method involving a Perron cluster eigenproblem. The paper presents an improved Perron cluster analysis algorithm, which is more robust than earlier suggestions. Numerical examples are included.
    Type of Medium: Online Resource
    Pages: Online-Ressource (27 S., 1,02 MB)
    Series Statement: ZIB-report 2003, 19
    Language: English
    Note: Unterschiede zwischen dem gedruckten Dokument und der elektronischen Ressource können nicht ausgeschlossen werden , Auch als gedr. Ausg. vorhanden , Systemvoraussetzungen: Acrobat reader.
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  • 5
    Keywords: Hochschulschrift ; Forschungsbericht
    Description / Table of Contents: The problem of clustering data can be formulated as a graph partitioning problem. Spectral methods for obtaining optimal solutions have reveceived a lot of attention recently. We describe Perron Cluster Cluster Analysis (PCCA) and, for the first time, establish a connection to spectral graph partitioning. We show that in our approach a clustering can be efficiently computed using a simple linear map of the eigenvector data. To deal with the prevalent problem of noisy and possibly overlapping data we introduce the min Chi indicator which helps in selecting the number of clusters and confirming the existence of a partition of the data. This gives a non-probabilistic alternative to statistical mixture-models. We close with showing favorable results on the analysis of gene expressi on data for two different cancer types.
    Type of Medium: Online Resource
    Pages: Online-Ressource (22 S., 588,3 KB)
    Series Statement: ZIB-report 2004, 39
    Language: English
    Note: Unterschiede zwischen dem gedruckten Dokument und der elektronischen Ressource können nicht ausgeschlossen werden , Auch als gedr. Ausg. vorhanden , Systemvoraussetzungen: Acrobat reader.
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  • 6
    Online Resource
    Online Resource
    Berlin-Dahlem : ZIB
    Keywords: Hochschulschrift ; Forschungsbericht
    Description / Table of Contents: In this paper we interpret clustering as a mapping of data into a simplex. If the data itself has simplicial struture this mapping becomes linear. Spectral analysis is an often used tool for clustering data. We will show that corresponding singular vectors or eigenvectors comprise simplicial structure. Therefore they lead to a cluster algorithm, which consists of a simple linear mapping. An example for this kind of algorithms is the Perron cluster analysis (PCCA). We have applied it in practice to identify metastable sets of molecular dynamical systems. In contrast to other algorithms, this kind of approach provides an a priori criterion to determine the number of clusters. In this paper we extend the ideas to more general problems like clustering of bipartite graphs.
    Type of Medium: Online Resource
    Pages: Online-Ressource (24 S., 380,6 KB)
    Series Statement: ZIB-report 2004, 3
    Language: English
    Note: Unterschiede zwischen dem gedruckten Dokument und der elektronischen Ressource können nicht ausgeschlossen werden , Auch als gedr. Ausg. vorhanden , Systemvoraussetzungen: Acrobat reader.
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  • 7
    Online Resource
    Online Resource
    San Diego :Elsevier Science & Technology,
    Keywords: Mathematical physics. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (959 pages)
    Edition: 1st ed.
    ISBN: 9780080469850
    Language: English
    Note: Cover -- Inside front cover -- Contents -- Preface -- 1 Vector Analysis -- 2 Vector Analysis in Curved Coordinates and Tensors -- 3 Determinants and Matrices -- 4 Group Theory -- 5 Infinite Series -- 6 Functions of a Complex Variable I: Analytic Properties Mapping -- 7 Functions of a Complex Variable II: Calculus of Residues -- 8 Differential Equations -- 9 Sturm-Liouville Theory-Orthogonal Functions -- 10 The Gamma Function (Factorial Function) -- 11 Legendre Polynomials and Spherical Harmonics -- 12 Bessel Functions -- 13 Hermitie and Laguerre Polynomials -- 14 Fourier Series -- 15 Integral Transforms -- 16 Partial Differential Equations -- 17 Probability -- 18 Calculus of Variations -- 19 Nonlinear Methods and Chaos -- Appendix 1 Real Zeros of a Function -- Index -- Inside back cover.
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  • 8
    Online Resource
    Online Resource
    San Diego :Elsevier Science & Technology,
    Keywords: Picosecond pulses. ; Semiconductors. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (483 pages)
    Edition: 1st ed.
    ISBN: 9780080540955
    Series Statement: Issn Series
    DDC: 537.622
    Language: English
    Note: Front Cover -- Ultrafast Physical Processes in Semiconductors -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. Ultrafast Electron-Phonon Interactions in Semiconductors: Quantum Kinetic Memory Effects -- I. Introduction -- II. General Considerations -- III. Experimental Technique -- IV. Results and Discussion -- V. Conclusion -- References -- Chapter 2. Spatially and Temporally Resolved Near-Field Scanning Optical Microscopy Studies of Semiconductor Quantum Wires -- I. Introduction -- II. Semiconductor Nanostructures -- III. Near-Field Scanning Optical Microscopy -- IV. Stationary Near-Field Spectroscopy of Semiconductor Nanostructures -- V. Time-Resolved Near-Field Spectroscopy -- VI. Outlook and Conclusions -- References -- Chapter 3. Ultrafast Dynamics in Wide Bandgap Wurtzite GaN -- I. Introduction -- II. Raman Spectroscopy in Semiconductors -- III. Samples, Experimental Setup, and Approach -- IV. Phonon Modes in the Wurtzite Structure GaN -- V. Experimental Results -- VI. Conclusions and Future Experiments -- References -- Chapter 4. Ultrafast Dynamics and Phase Changes in Highly Excited GaAs -- I. Introduction -- II. Measuring Ultrafast Phenomena with Light -- III. Dynamics of Electrons and Atoms from Femtoseconds to Microseconds -- IV. Measuring the Time-Resolved Dielectric Function -- V. Time-Resolved Dielectric Function of Highly Excited GaAs -- VI. Carrier and Lattice Dynamics -- VII. Conclusions -- References -- Chapter 5. Quantum Kinetics for Femtosecond Spectroscopy in Semiconductors -- I. Introduction -- II. Semiconductor Bloch Equations for Pulse Excitation with Quantum Kinetic Scattering Integrals -- III. Low-Excitation Femtosecond Spectroscopy -- IV. Femtosecond DTS for Screened Coulomb and LO-Phonon Quantum Kinetic Scattering. , V. Resonant FWM with Screened Coulomb and LO-Phonon Quantum Kinetic Scattering -- References -- Chapter 6. Coulomb Correlation Signatures in the Excitonic Optical Nonlinearities of Semiconductors -- I. Introduction -- II. Theoretical Approach and Model -- III. Applications to Pump-Probe Spectroscopy -- IV. Absorption Changes Induced by Incoherent Occupations -- V. Applications to Four-Wave-Mixing Spectroscopy -- VI. Summary -- VII. Outlook -- References -- Chapter 7. Electronic and Structural Response of Materials to Fast, Intense Laser Pulses -- I. Introduction -- II. Tight-Binding Electron-Ion Dynamics -- III. ε (ω ) and χ(2) as Signatures of a Nonthermal Phase Transition -- IV. Detailed Information from Microscopic Simulations -- V. Formula for the Second-Order Susceptibility χ(2) -- VI. Response of Si to Fast, Intense Pulses -- VII. Density Functional Simulation for Si -- VIII. Response of C60 to Ultrafast Pulses of Low, High, and Very High Intensity -- IX. The Simplest System, H2+ -- X. Biological Molecules -- XI. Conclusion -- References -- Chapter 8. Coherent THz Emission in Semiconductors -- I. Introduction -- II. Principles of Pulsed THz Emission and Detection -- III. Macroscopic Currents and Polarizations -- IV. Coherent Charge Oscillations -- V. THz Emission from Quantum Structures -- VI. Applications in Semiconductor Spectroscopy -- VII. Conclusions -- References -- Index -- Contents of Volumes in This Series.
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