In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 18, No. 6 ( 2000-11-01), p. 2794-2798
Abstract:
Semiconductor devices incorporating copper interconnects are set to revolutionize the performance and functionality of integrated circuits. Copper interconnects enable faster and more reliable circuitry at sub-0.25 μm dimensions with lower resistivity and excellent resistance to electromigration. Numerous methodologies exist whereby copper can be deposited, with chemical vapor deposition (CVD) being one such technique. A vacuum pumping system that effectively and efficiently handles the process byproducts from the CVD precursor Cu(hfac)(TMVS) has been developed and qualified. It is shown that a standard dry pump used in conjunction with additional apparatus in the vacuum system results in the safe handling of process byproducts. The performance of each component of the vacuum system has been individually qualified and the abatement performance of the overall system shows & gt;99% destruction efficiency of process effluent.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2000
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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