Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 3833-3835
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report that homojunction AlxGa1−xAs avalanche photodiodes (APDs) exhibit very low multiplication noise when the Al content is ≥80%. It was also found that, due to nonlocal effects, the multiplication noise decreased as the ionization region thickness was reduced from 0.8 μm to ≤0.2 μm for Al ratios (from 0 to 0.9). The excess noise factor of the thin (140 nm) Al0.9Ga0.1As APDs is the lowest reported to date for III–V compounds and is comparable to that of Si avalanche photodiodes. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1343851
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