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  • American Institute of Physics (AIP)  (3)
  • International Union of Crystallography (IUCr)
  • 2000-2004  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1772-1775 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: For a piezoelectric device with multiple electrodes, it should be possible to quantitatively and conveniently measure the piezoelectric coefficient d31 by use of the double piezoelectric effect, without the need for any unusual apparatus or a calibration sample. One pair of electrodes is used to excite the piezo, and another is used to measure the response. For example, for a piezoelectric tube this should allow measurement of d31 as a function of temperature or of lateral offset voltage. An important correction to the current theory is described. Measurements on two piezo tubes are presented for excitation voltages in the range of 0.5–110 Vpp. An inductive proximity sensor was used to measure the actual piezo motion. It is shown that the current theory disagrees with this and previous experiments by a simple factor of 2 for symmetric excitations. However, for asymmetric excitations the disagreement with theory is more complex, and the current theory does not accurately predict the effects of varying tube geometry. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8276-8285 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A mathematical model describing the coupling of electrical, optical and thermal effects in semiconductor lasers is introduced. Through a systematic asymptotic expansion, the governing system of differential equations is reduced to a single second-order boundary value problem. This highly nonlinear equation describes the time-independent maximum temperature in the boundary layer adjacent to the mirror facet. The solution of the problem is a multi-valued function of current. The graph of the maximum steady-state temperature as a function of current gives a fold-shaped response curve, which indicates that no bounded steady state exists beyond a critical value of current. For certain device parameters and initial conditions, thermal runaway occurs. A mechanism for the sudden mode of semiconductor laser failure is described in terms of thermal runaway. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 117 (2002), S. 1214-1219 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A new method for calculation of the radial distribution functions (RDFs) at contact from a specified hard-sphere mixture equation of state (EOS) is proposed. The method is applied to two available accurate EOS expressions and new analytical formulas for the RDFs are obtained for binary additive hard-sphere mixtures. The results of the new formulas are compared with available computer simulation data and with those of other RDF expressions from the literature. The evidence to date suggests that the new formula is more accurate than alternative formulas currently available. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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