GLORIA

GEOMAR Library Ocean Research Information Access

X

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • AIP Publishing  (2)
  • 2000-2004  (2)
Material
Publisher
  • AIP Publishing  (2)
Person/Organisation
Language
Years
  • 2000-2004  (2)
Year
Subjects(RVK)
  • 1
    Online Resource
    Online Resource
    Photoluminescence of Ge nanoparticles embedded in SiO2 glasses fabricated by a sol–gel method
    AIP Publishing ; 2002
    In:  Applied Physics Letters Vol. 81, No. 27 ( 2002-12-30), p. 5144-5146
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 81, No. 27 ( 2002-12-30), p. 5144-5146
    Abstract: Ge nanoparticles with different sizes in silica glasses were prepared by a sol–gel method using Cl3–Ge–C2H4–COOH as a Ge source. The size of the Ge nanoparticles decreases with a reduction in the content of Ge in the starting materials, and thus the optical absorption edge shifts to a higher energy. Silica gel glasses doped with Ge nanoparticles showed a strong room-temperature photoluminescence with peaks at 568, 607, 672, 722, and 775 nm. The peak position of photoluminescence spectrum scarcely depends on the Ge/Si ratio. However, the photoluminescence intensity increases sharply as the Ge/Si ratio is reduced. The photoluminescence arises from the Ge clusters of diameter of & lt;1–2 nm with a molecular character instead of nanocrystalline Ge with the diamond structure.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.1506943
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2002
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 2
    Online Resource
    Online Resource
    Thickness dependence of exciton and polariton spectra from ZnSe films grown on GaAs substrates
    AIP Publishing ; 2001
    In:  Journal of Applied Physics Vol. 90, No. 12 ( 2001-12-15), p. 6114-6119
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 90, No. 12 ( 2001-12-15), p. 6114-6119
    Abstract: ZnSe films with thicknesses from 0.05 to 1.45 μm were grown on GaAs substrates by molecular beam epitaxy. Low temperature photoluminescence (PL) and reflectance spectra are presented to show the thickness dependence of the exciton and polariton properties in the films. In addition to sharp PL peaks from free and donor bound excitons, an acceptor bound exciton peak was observed in the thin films and its intensity decreases rapidly with the film thickness. The PL characteristics show the acceptor centers being the defect states near the ZnSe/GaAs interface. The classical theory of exciton–polaritons was used to calculate the reflectance spectra and compared to the measured results. The comparison reveals the effects of strain, surface, and interface on the reflectance spectra from both heavy- and light-hole excitons. In addition to the strain-induced light- and heavy-hole splitting, the light-hole excitons show a larger damping and less sensitivity to the surface dead layer than the heavy-hole excitons. When the film thickness increases, the interference effects become more important and the contribution from the excited exciton states to the reflectance spectra may no longer be negligible.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.1415061
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2001
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...