In:
Journal of Applied Physics, AIP Publishing, Vol. 91, No. 12 ( 2002-06-15), p. 9788-9793
Abstract:
Microstructures of W/barrier metals (TiN,WNx)/Si multilayer films followed by heat treatment were precisely investigated by x-ray diffraction and high-resolution transmission electron microscopy. The analysis results showed that in the W/TiN/Si stacked film having the W (110) and (200) preferred orientations, the TiN film itself plays a role as a barrier for the reaction of W and Si, whereas in the case of the WNx barrier having the W (110) one, the amorphous SixNy layer with a thickness of a few nanometers works effectively as a barrier, which was formed during the deposition and denudation process of the WNx film. Furthermore, the nanometer-scaled interfacial reaction in the multilayer films was clearly investigated by x-ray photoelectron spectroscopy coupled with chemical etching and an energy-filtered elemental mapping technique. Based on the results, effects of barrier metals on the W preferred orientation and the interfacial reaction were crystallographically and thermodynamically discussed.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2002
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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