In:
Journal of Applied Physics, AIP Publishing, Vol. 93, No. 7 ( 2003-04-01), p. 3971-3973
Abstract:
In this work, an experimental study of defects at the Si(111)/SiO2 interface following rapid thermal annealing (RTA) in a nitrogen ambient at 1040 °C is presented. From a combined analysis using electron spin resonance and quasistatic capacitance–voltage characterization, the dominant defects observed at the Si(111)/SiO2 interface following an inert ambient RTA process are identified unequivocally as the Pb signal (interfacial Si3≡Si⋅) for the oxidized Si(111) orientation. Furthermore, the Pb density inferred from electron spin resonance (7.8±1)×1012 cm−2, is in good agreement with the electrically active interface state density (6.7±1.7)×1012 cm−2 determined from analysis of the quasistatic capacitance–voltage response.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2003
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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