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  • AIP Publishing  (6)
  • 2000-2004  (6)
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  • AIP Publishing  (6)
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  • 2000-2004  (6)
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  • 1
    Online Resource
    Online Resource
    Magnetic tunnel junctions on magnetic shield smoothed by gas cluster ion beam
    AIP Publishing ; 2001
    In:  Journal of Applied Physics Vol. 89, No. 11 ( 2001-06-01), p. 6653-6655
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 89, No. 11 ( 2001-06-01), p. 6653-6655
    Abstract: In this work, a technique, gas cluster ion beam (GCIB), was introduced to smooth the bottom NiFe magnetic shield for magnetic tunnel junction (MTJ) read heads. The GCIB treatment can bring the surface roughness of the shield from 15 to 20 Å to around 5 Å, and the most of scratch marks can be removed. The efficiency of the GCIB process is dependent on the initial surface morphology. The MTJs grown on the magnetic shield smoothed by the GCIB show that the resistance area product RA is increased from 60 to ∼100 Ω μm2 with the GCIB dose up to 1×1016 ions/cm2, arising from a smooth insulating layer, meanwhile, the tunneling magnetoresistance (TMR) is almost constant or slightly decreases. This GCIB process can also improve breakdown voltage (approximately 0.019 V per 1015 ions/cm2) of the MTJs, and slightly increase the ferromagnetic coupling mainly due to the change of the surface morphology. Using this technology, an RA as low as 3.5–6.5 Ω μm2 together with a TMR of 14%–18% can be obtained for MTJs grown on the GCIB treated NiFe magnetic shield.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.1359217
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2001
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Low resistance and high thermal stability of spin-dependent tunnel junctions with synthetic antiferromagnetic CoFe/Ru/CoFe pinned layers
    AIP Publishing ; 2000
    In:  Applied Physics Letters Vol. 76, No. 17 ( 2000-04-24), p. 2424-2426
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 76, No. 17 ( 2000-04-24), p. 2424-2426
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.126364
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2000
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 3
    Online Resource
    Online Resource
    Electron Bernstein wave emission diagnostic assisted by reflectometry on TST-2 spherical tokamak
    AIP Publishing ; 2003
    In:  Review of Scientific Instruments Vol. 74, No. 3 ( 2003-03-01), p. 1453-1456
    Details
    In: Review of Scientific Instruments, AIP Publishing, Vol. 74, No. 3 ( 2003-03-01), p. 1453-1456
    Abstract: A new electron Bernstein wave emission diagnostic consisting of a heterodyne radiometer and a reflectometer was installed on TST-2. The instrument has a frequency range from 5 to 12 GHz which covers partially the fundamental and fully covers the second and third harmonic emissions. X-mode emission perpendicular to the flux surface, generated by B–X–FX mode-conversion scenario, is measured. The mode-conversion efficiency is calculated using a one-dimensional full-wave code with the density profile obtained simultaneously from the reflectometer, and the electron temperature (Te) is estimated. The levels corresponding to the 100–150 eV range are measured from the plasma core region, and the mode-conversion efficiency is calculated to be 0.5–0.8, leading to Te of approximately 200 eV. In addition, it is found that the reflectivity measured by the reflectometer is consistent with the calculated mode-conversion efficiency. This property can be used for a direct measurement of the mode-conversion efficiency.
    Type of Medium: Online Resource
    ISSN: 0034-6748 , 1089-7623
    URL: Article
    DOI: 10.1063/1.1530386
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2003
    detail.hit.zdb_id: 209865-9
    detail.hit.zdb_id: 1472905-2
    SSG: 11
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  • 4
    Online Resource
    Online Resource
    Doppler-free laser polarization and optical–optical double resonance polarization labeling spectroscopies of a large molecule: Naphthalene
    AIP Publishing ; 2003
    In:  The Journal of Chemical Physics Vol. 119, No. 7 ( 2003-08-15), p. 3691-3698
    Details
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 119, No. 7 ( 2003-08-15), p. 3691-3698
    Abstract: Doppler-free laser polarization (DFLP) spectroscopy is successfully applied to a large polyatomic molecule, naphthalene. Rotationally resolved spectra of the 33(b2g)01 vibronic band of the Ã 1B1u←X̃ 1Ag electronic transition of gas phase naphthalene at room temperature have been measured with the technique of DFLP spectroscopy. The typical width of the observed spectral lines was 15 MHz, and the absolute wave numbers were measured with an accuracy of better than ±0.0002 cm−1. In order to assign the dense and complicated parts of the spectra, the technique of Doppler-free optical–optical double resonance polarization labeling spectroscopy was used. Both V-type and Λ-type double resonances were observed, and these signals were found to be very useful for the unambiguous assignment of the complicated lines of DFLP spectrum. Three rotational constants A, B, and C, three symmetric-top quartic centrifugal distortion constants ΔJ, ΔJK, and ΔK, and two asymmetric-top distortion constants δJ and δK were determined by a least-squares fitting of 4632 spectral lines in the range J=4–154 and Ka=0–40 with a standard deviation of 0.0002 cm−1. No appreciable perturbation was observed.
    Type of Medium: Online Resource
    ISSN: 0021-9606 , 1089-7690
    URL: Article
    DOI: 10.1063/1.1590961
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2003
    detail.hit.zdb_id: 3113-6
    detail.hit.zdb_id: 1473050-9
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  • 5
    Online Resource
    Online Resource
    Extra current channels in longitudinally biased magnetic tunnel junctions
    AIP Publishing ; 2000
    In:  Journal of Applied Physics Vol. 87, No. 9 ( 2000-05-01), p. 4688-4690
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 87, No. 9 ( 2000-05-01), p. 4688-4690
    Abstract: Experiments on the longitudinal biasing of microsized magnetic tunnel junctions have been conducted using permanent magnets partially overlapping the junction area. The tunneling magnetoresistance ratio showed a strong dependency on the overlap length, since even a 10% overlap of the sensor length resulted in a 25% drop from its initial value without overlap. Analytical and micromagnetic analyses have demonstrated that this decrease comes from extra current channels, located in the regions below the permanent magnets, that shorted a large amount of the sense current from the central active region in the antiparallel magnetization state. The high uniaxial anisotropy field, induced by the permanent magnets in the overlapped regions, created particular magnetic configurations responsible for these low resistance paths. Several alternatives, using antiferromagnetic material in place of the permanent magnets or a modified design of the magnetic tunnel junction structure, are presented and discussed to prevent this extra current channel effect.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.373131
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2000
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 6
    Online Resource
    Online Resource
    Electrical breakdown of the magnetic tunneling junction with an AlOx barrier formed by radical oxidation
    AIP Publishing ; 2000
    In:  Journal of Applied Physics Vol. 87, No. 9 ( 2000-05-01), p. 5194-5196
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 87, No. 9 ( 2000-05-01), p. 5194-5196
    Abstract: In this work, the dielectric breakdown in magnetic tunnel junctions (MTJs) was studied. The MTJ structure is Ta50/NiFe100/Co20/AlOx/Co30/RuRhMn100/Ta50 with the bottom lead of Ta50/Cu500/Ta50 and the top lead of Cu2000/Ta50 (in Å), where the tunneling barrier was formed by 2–20 min radical oxygen oxidation of a 10 Å-thick Al layer. The junctions with area from 2×2 to 20×20 μm2 were patterned using the photolithography process, leading to tunneling magnetoresistance up to 17.2% and resistance-area product ranging from 350 Ω μm2 to 200 kΩ μm2. The junctions studied show dc breakdown voltage from 0.7 to 1.3 V, depending on the junction area and the oxidation time. Long oxidation time up to 14 min and a small junction area results in a large dc breakdown voltage. The electrostatic discharge (ESD) of MTJs was tested by using a human body model. The ESD breakdown voltage increases with decreasing junction resistance. These results are discussed in terms of the E-model based on the field-induced distortion of atomic bonds in the oxide barrier.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.373292
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2000
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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