Keywords:
Silicon -- Electric properties.
;
Electronic books.
Type of Medium:
Online Resource
Pages:
1 online resource (514 pages)
Edition:
1st ed.
ISBN:
9780080541006
Series Statement:
Issn Series
URL:
https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=311387
Language:
English
Note:
Front Cover -- Silicon Epitaxy: Semiconductors and Semimetals -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. CVD Technologies For Silicon: A Quick Survey -- Abbreviations Used -- I. Introduction -- II. Bulk Polycrystalline Silicon Processes -- III. Film Deposition: Reactors -- IV. Film Deposition: Products and Chemistries -- V. Aerosol CVD -- VI. Conclusions -- References -- Chapter 2. Epitaxial Growth Theory: Vapor-phase and Surface Chemistry -- I. Introduction -- II. Development of a Detailed Kinetic Scheme -- III. Gas-phase Kinetics for Silanes and Chlorosilanes -- IV. Surface Kinetics for Silanes and Chlorosilanes -- V. Gas-phase Precursors to Deposition and Overall Kinetic Scheme -- VI. Overall Kinetic Scheme and Concluding Remarks -- References -- Chapter 3. Epitaxial Growth Facilities, Equipment, and Supplies -- Abbreviations Used -- I. Introduction -- II. The Epitaxial Reactor -- III. Facilities -- IV. Process Gas and Delivery -- V. Exhaust Treatment -- VI. Equipment for Power Epitaxy -- VII. Advanced Applications -- VIII. Conclusion -- References -- Chapter 4. Epitaxial Growth Techniques: Low-temperature Epitaxy -- Abbreviations Used -- I. Introduction -- II. CVD Machines -- III. Surface Treatment -- IV. Epitaxial Growth Mechanisms -- V. High-quality Si/Si1-x Gex/Si Heterostructure Growth at High Ge Fractions -- VI. Conclusions -- References -- Chapter 5. Epitaxial Growth Techniques: Molecular Beam Epitaxy -- Abbreviations Used -- I. Introduction -- II. MBE Machines -- III. Surface Treatment -- IV. Growth Mechanisms -- V. Doping -- VI. Growth of SiGe(C) Alloys -- VII. Formation of Si/Ge Heterostructures -- VIII. Growth of SiGe Buffer Layers -- IX. Selective Growth -- X. Formation of Superlattices, Quantum Wires, and Quantum Dots -- XI. Conclusion -- References -- Chapter 6. Epitaxial Growth Modeling.
,
Nomenclature -- I. Introduction -- II. Detailed Modeling of Epitaxial Reactors -- III. Reduced-order Models for Epitaxial Silicon Deposition -- IV. Atomistic Aspects: Control of Crystal Morphology -- V. Summary -- References -- Chapter 7. Epitaxiai Layer Characterization and Metrology -- Abbreviations Used -- I. Introduction -- II. On Sampling and Accuracy -- III. Doping Control -- IV. Thickness Measurements -- V. Contamination and Surface Quality -- VI. Future Developments and Conclusions -- References -- Chapter 8. Epitaxy for Discrete and Power Devices -- Nomenclature -- I. Introduction -- II. General Considerations -- III. Specific Epitaxy Processes for Power and Discrete Devices -- IV. Defects and Problems -- V. Accessory Considerations -- Chapter 9. Epitaxy on Patterned Wafers -- I. Introduction -- II. Device Requirements and Process Complexity -- III. Surface Preparation: Pre-epitaxial Cleaning -- IV. Geometrical Pattern Integrity -- V. Doping Pattern Integrity -- VI. Crystal Defectivity -- VII. Conclusion: The Best Epitaxial Recipe? -- Bibliography -- Chapter 10. Si-based Alloys: SiGe and SiGe:C -- I. Introduction -- II. Applications of Si Alloys -- III. Low-temperature Surface Preparation -- IV. Process Chemistry for Si Alloy Deposition -- V. Metrology of Si1-x Gex Layers -- VI. Production Robust Si1-x Gex Processing -- VII. Summary -- References -- Chapter 11. Silicon Epitaxy: New Applications -- I. Introduction -- II. Equipment: State of the Art -- III. Epitaxy Processes -- IV. New Applications -- V. Conclusion -- References -- Index -- Contents of Volumes In This Series -- Color Plate Section.
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