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  • American Institute of Physics (AIP)  (3)
  • 2000-2004  (3)
  • 1985-1989
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  • 1
    Electronic Resource
    Electronic Resource
    Enhanced optical gain in InGaN–AlGaN quantum wire and quantum dot lasers due to excitonic transitions (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7354-7359 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article presents computation of optical gain and threshold current density in InGaN–AlGaN quantum wire and dot lasers in the presence of dislocations and surface states. The exciton binding energy including the effect of strain induced piezoelectric field is calculated to be 10–80 meV in InGaN–AlGaN quantum wires and dots, depending on the lateral and transverse dimensions. In contrast to the conventional GaAs or InP based quantum wires, these high binding energy results in large exciton densities, making optical transitions due to excitons dominant over free electrons and holes. Optical gain and threshold current density in InGaN–AlGaN based multiple quantum wire and dot lasers are computed including the effect of dislocation-induced traps. The calculated threshold current density Jth for defect free compressive-strained InGaN quantum wire (50 Å×50 Å) and dot (50 Å × 50 Å × 50 Å) lasers, realized on sapphire or SiC substrates, are shown to yield ultralow threshold current density of 233 and 88 A/cm2, respectively. In the presence of dislocations (1×1010 cm−2), the threshold current densities only increase to 924 and 623 A/cm2 for the same wire and dot, when we include the contribution of excitonic transitions. However, the corresponding values increase significantly to 30 838 and 11 647 A/cm2 if the exciton enhancement is not included. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372993
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence behavior of poly(quinoline)s in silica glasses via the sol–gel process (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1162-1164 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A full color display with its spectra covering the entire visible color range using a single polymer is presented here. Different concentrations of poly(2,6-[4-phenylquinoline]) and poly(2,6-[p-phenylene]-4-phenylquinoline) were incorporated into silica gels via the sol–gel technique. At high concentrations, the conjugated polymers form multiple excimers in the channels within the silica network, leading to the emission of red light (∼600 nm). At low concentrations, the polymer chains are isolated and are being trapped individually in the silica domain, which results in the emission of blue light (∼400 nm). For concentrations in-between, moderate extensive chain interaction leads to the emission of green, yellow, and orange colors. Therefore, the color tunability can be achieved by simply varying the concentration of quinoline polymers in the silica glasses. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1450040
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  • 3
    Electronic Resource
    Electronic Resource
    Thin-film metrology of silicon-on-insulator materials (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 46-48 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic rotating-analyzer ellipsometry employing a compensator was used to measure the ellipsometric angles and depolarization from 0.73 to 5.4 eV of commercial separation by implantation of oxygen wafers. The data were analyzed to find the thicknesses of the native oxide cap, the top Si layer, and the buried oxide (BOX). From the depolarization in the spectral region of interference fringes, we determine layer thickness nonuniformities. Although a reasonable agreement between the data can be found by describing the BOX with the optical constants of thermal oxide, it can be improved by modeling the BOX as an effective medium consisting of thermal oxide and amorphous Si. The physical justification for this model is the presence of Si islands near the BOX/substrate interface. We compare our ellipsometry results with a destructive analysis using electron microscopy and secondary ion mass spectrometry. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125651
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