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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1046-1052 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice sites of ion-implanted Li atoms in 6H-, 4H-, and 3C-SiC were studied. Radioactive 8Li ions (t1/2=0.84 s) were implanted with 60 keV into the crystalline SiC samples, and the channeling and blocking effects of 1.6 MeV alpha particles emitted in the decay were measured to determine the Li lattice sites. The alpha emission channeling spectra measured along different crystallographic directions reveal that Li occupies mainly interstitial sites with tetrahedral symmetry, centered along the c-axis atom rows in the hexagonal lattices. In the cubic 3C-SiC structure, Li is located on tetrahedral interstitial sites as well. For 6H-SiC, the implantation temperature was varied between 200 and 823 K without observing significant changes in the emission channeling spectra. Thus, Li diffusion or Li defect interaction resulting in a lattice site change does not occur in this temperature regime. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4237-4245 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the growth and the properties of (t)a-C:F films prepared by the deposition of mass separated 12C+ and 19F+ ions as a function of the F concentration. The films are always strongly F deficient due to the formation of volatile F2 and CFx molecules during the deposition process. A maximum F content of about 25 at. % is obtained for an ion charge ratio of C+:F+=1:1. The observed mechanical, optical, electrical, and structural properties as well as the thermal stability of the films are strongly influenced by the F content. A three step progression of the film structure is evident for increasing F concentration: the amorphous three-dimensional network of tetrahedrally bonded carbon atoms of pure carbon films (ta-C) with diamondlike properties is doped for very low F concentrations (ta-C:F). A further increase of the F content results first in transformation to a graphitelike amorphous structure (a-C:F) before the deposited films become porous and to a polymerlike one for the highest F content. © 2001 American Institute of Physics.
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  • 3
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Critical currents of YBa2Cu3O7−δ bulk-sintered samples were measured at and above 77 K in the presence of magnetic fields. In moderate magnetic fields a H−n dependence with n〈1 was observed. Transport measurements give n(approximately-equal-to)0.5, indicating that critical currents are limited by flux creep rather than by field quenching of Josephson junctions.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2149-2157 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The recovery of structural defects in gallium nitride (GaN) and aluminum nitride (AlN) after implantation of 111In+ and 89Sr+ in the dose range (0.1–3) 1013 cm−2 and ion energies of 60–400 keV has been investigated as a function of annealing temperature with emission channeling (EC) and perturbed γγ angular correlation spectroscopy. The implanted In and Sr atoms occupied substitutional sites in heavily perturbed surroundings of point defects after room temperature implantation. No amorphization of the lattice structure was observed. The point defects could be partly removed after annealing to 1473 K for 10–30 min. Lattice site occupation of implanted light alkalis, 24Na+ in GaN and AlN as well as 8Li+ in AlN, were also determined by EC as a function of implantation and annealing temperature. These atoms occupied mainly interstitial sites at room temperature. Lithium diffusion and the occupation of substitutional sites was observed in GaN and AlN at implantation temperatures above 700 K. A lattice site change was also observed for sodium in AlN, but not in GaN after annealing to 1073 K for 10 min. © 2000 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3085-3089 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice sites of ion implanted Li atoms in GaN were studied as a function of implantation temperature between room temperature and 770 K. We measured the channeling and blocking patterns of α-particles emitted in the radioactive decay of implanted 8Li ions to determine the Li lattice sites. Below 700 K Li atoms occupy mainly interstitial sites in the center of the c-axis hexagons at positions c/4 and 3c/4, where c is the lattice constant in c-axis direction. Around 700 K Li starts to diffuse and presumably interacts with vacancies created in the implantation process. This leads to the formation of substitutional Li above 700 K. An activation energy of about 1.7 eV for interstitial Li diffusion was determined. © 1998 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 58 (1987), S. 363-368 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A setup for pulse radiolysis experiments is described consisting of the following main components: an array of 15 photomultipliers attached to a spectrograph (allowing 4032 spectra to be recorded with a time resolution of 500 ns per spectrum), self-regulating high-voltage supply for the photomultipliers, computer-controlled solution mixing and dispensing system, and provisions for continuous dose variation of the FEBETRON-accelerator electron beam. The general performance of the system is discussed and construction or electronic details are given for special components.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 353-355 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A set of powerful x-ray imaging techniques using white-beam synchrotron radiation have been developed and applied to clearly reveal and map micropipes in SiC crystals at a "magnified" level. The experimental results and the corresponding simulations demonstrate explicitly that the micropipes are pure superscrew dislocations (SSDs). Moreover, these techniques provide accurate descriptions of the detailed structure of the SSDs, including the spatial distribution of the strain fields, the magnitudes of the Burgers vectors, the dislocation senses, and the surface relaxation effects. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 5558-5571 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Extensive multireference configuration interaction calculations were carried out in order to obtain complete two-dimensional (2D) potential energy surfaces for the amidogen (NH2) radical as functions of both N–H bond lengths keeping the bond angle fixed at its experimental ground state equilibrium value. The eight lowest-lying states (four of each symmetry, A′ and A″) were treated mainly for the purpose of using these surfaces in subsequent studies of the photodissociation dynamics. In analogy with the neighboring dihydrides CH2 and H2O the photodissociation of NH2 into NH+H (hydrogen abstraction) takes place preferentially after excitation of the first two Rydberg s states (3 2A′/2 2A1 and 2 2A″/2 2B1) found closely together at about 7.6 eV. The transition dipole moments connecting the ground state with these two states are large (0.44 a.u. and 0.66 a.u.) in the Franck–Condon region, but the behavior of the potentials in the dissociation channel is quite different. The 3 2A′/2 2A1 state is weakly repulsive whereas the 2 2A″/2 2B1 state is strongly repulsive. This will result in differences in the dissociation dynamics for the two states.The next higher state which should play a role in the NH2 photodissociation is the 4 2A″/3 2B1 Rydberg s state at 9.4 eV, because of its large transition dipole moment with the ground state (0.36 a.u.). Close to this state, many Rydberg p states were found. Due to the high density of states in the region above 9.0 eV, interactions of these states are expected and should lead to complicated dissociation dynamics. Contrary to CH2, the two low-lying valence states for NH2 are found at lower energies [2.2 eV (1 2A1) and 6.5 eV (1 2B2)], well separated from the first members of the Rydberg series. These states are less important for the photodissociation of NH2, compared with CH2, because the first state is bound and the transition to the other is dipole-forbidden in C2v symmetry. For H2O, the valence states are missing. © 1996 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 4375-4381 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The B 3Π–X 3Δ (1,0) band of titanium monoxide has been studied at sub-Doppler resolution (0.002 cm−1) by crossing a beam of TiO molecules with a cw tunable laser beam and by collecting the laser-induced fluorescence. The rotational structure of 42 branches belonging to the 3Π–3Δ transition has been analyzed up to rotational quantum numbers equal to 94. Spectroscopic data have been reduced to a set of 24 molecular constants, using a case (a) effective Hamiltonian. The rotational, spin–orbit and Λ-doubling constants are discussed in terms of the leading configurations which give rise to the X 3Δ and B 3Π electronic states. It is shown that for the B state, existing ab initio calculations are not able to reproduce the second order spin–orbit effect and the Λ doubling effect. © 1995 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 1926-1936 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A sub-Doppler experiment involving an effusive beam of lithium dimers and a continuous wave (cw) tunable dye laser is used to record the absorption spectrum of the B–X system. Predissociation due to tunneling through the potential barrier of the B state is studied in a small range of energy above the Li(2p)+Li(2s) dissociation limit by analyzing the shape of homogeneously broadened absorption lines and by measuring the fluorescence intensity of Li atoms. Experimental data are interpreted in the frame of a semiclassical dynamical model involving the shape of the potential barrier. Their accuracy should address an improvement of the potential shape through a full quantal dynamical model. © 1999 American Institute of Physics.
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