In:
Journal of Applied Physics, AIP Publishing, Vol. 101, No. 10 ( 2007-05-15)
Abstract:
In this article, incorporating ytterbium into Ni-silicide using an Yb interlayer is proposed to reduce the work function of Ni-silicide for a Ni-silicided Schottky barrier diode. The proposed Ni-silicide exhibited good Schottky barrier diode characteristics owing to the reduced work function of about 0.15−0.38 eV. Even though the ytterbium layer was deposited below nickel, a ternary phase (YbxNi1−x)Si is formed at the top region of the Ni-silicide, which is believed to reduce the work function.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2007
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
Permalink