In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 27, No. 6 ( 2009-11-01), p. 1316-1319
Abstract:
CuAl 0.90 Zn 0.10 S 2 thin films were deposited by pulsed plasma deposition. The dependence of structural, surface morphology, electrical, and optical properties of the films on substrate temperature was investigated. X-ray diffraction patterns reveal that the film be amorphous structure. The electrical properties are sensitive to the substrate temperature. A typical sample with conductivity of 50.9 S cm−1, carrier mobility of 3.13 cm2 V−1 s−1, carrier concentration of 1.41×1019 cm−3, and average transmission of 74% in visible range of 400–700 nm was obtained. A transparent p-CuAlS2:Zn/n-In2O3:W heterogeneous diode was also fabricated and exhibits rectifying current-voltage characteristics. The ratio of forward current to the reverse current exceeds 80 within the range of applied voltages of −3.0–+3.0 V and the turn-on voltage is approximately 0.5–0.8 V.
Type of Medium:
Online Resource
ISSN:
0734-2101
,
1520-8559
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2009
detail.hit.zdb_id:
1475424-1
detail.hit.zdb_id:
797704-9
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