In:
Applied Physics Letters, AIP Publishing, Vol. 92, No. 12 ( 2008-03-24)
Abstract:
A process has been developed to bond gallium nitride structures grown on sapphire with silicon substrates, using sequentially deposited nickel-gold thin metal layers. Temperature and pressure treatment results in alloying of NiAu with robust interface bond strength of 7.1MPa between GaN and Si. Transmission electron microscopy showed bright and dark regions of varying nickel-gold composition with uniform layer thickness. Micro-Raman and x-ray photoelectron spectroscopy revealed compressive stress relaxation and Ga–Ni and Au–Si alloying phases, respectively. The transferred light emitting diodes exhibit a turn-on voltage of 2.5V and could sustain beyond 300mA, proving a way to have vertical structure light emitting diodes on Si substrates.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2008
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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