In:
Applied Physics Letters, AIP Publishing, Vol. 93, No. 21 ( 2008-11-24)
Abstract:
In this letter, amorphous Bi1.5Zn1.0Nb1.5O7 films with large permittivity (∼70) are prepared as the gate dielectric for ZnO nanowire field-effect transistors by using low-temperature (∼100°C) pulsed laser deposition. The transistors exhibit a low operation gate voltage ( & lt;3V), a high carrier mobility (∼42cm2∕Vs), and a steep subthreshold swing up to 240mV/decade. These results combined with near-room-temperature processing technique suggest that the nanowire transistor with Bi1.5Zn1.0Nb1.5O7 dielectric is a promising candidate for high-performance flexible electronics.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2008
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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