In:
Applied Physics Letters, AIP Publishing, Vol. 89, No. 3 ( 2006-07-17)
Abstract:
Thin HfLaOx films on Si(100) have been investigated as an alternative gate insulator. The introduction of La2O3 into HfO2 causes an increase of crystallization temperature. Furthermore, unlike other Hf-based amorphous materials such as HfSiOx or HfAlOx, the permittivity of HfLaOx keeps a high value ( & gt;20). The capacitance-voltage curve of metal oxide semiconductor capacitor using the HfLaOx dielectric film has shown a negligible hysteresis and no frequency dispersion, indicating very small degradations of both interface and bulk properties. In addition, a very low fixed charge density in HfLaOx films is demonstrated from a very small film thickness dependence of the flatband voltage.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2006
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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