In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 483-485 ( 2005-5), p. 653-656
Abstract:
In this work, we present results on the study of bonding and concentration of carbon in 4H-SiC MOS structure by x-ray photoelectron spectroscopy (XPS). The XPS spectra were fitted by several Gaussian lineshape functions. It is found that the so-called carbon clusters (C-C bonds) appear at the interface of SiO2/SiC, but are not seen in the oxide bulk. However, there are still some SiOxCy and Si-C bonds inside the oxide and the integrated area ratio of SiOxCy/Si-C bonds increases when further away from the SiO2/SiC interface. These observations can be interpreted in terms of the dynamic oxidation process that transforms Si-C bonds into SiOxCy bonds, which are then further oxidized to form SiO2 bonds.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.483-485
DOI:
10.4028/www.scientific.net/MSF.483-485.653
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2005
detail.hit.zdb_id:
2047372-2
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