In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 10R ( 2005-10-01), p. 7485-
Abstract:
A long-emission-wavelength laser with multiple InGaAs/GaAs quantum wells without a strain-compensated barrier was grown by metalorganic chemical vapor deposition (MOCVD). InGaAs quantum well (QW) broad-area laser diodes with an emission wavelength of up to 1214 nm were realized. A measured room-temperature threshold current density of only 173 A/cm 2 for a 2-mm-cavity device and a transparency current density of 66 A/cm 2 were obtained. The internal quantum efficiency and laser cavity loss were 67% and 6 cm -1 , respectively.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.7485
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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