In:
Solid State Phenomena, Trans Tech Publications, Ltd., Vol. 124-126 ( 2007-6), p. 247-250
Abstract:
SiO2 films were prepared by atomic layer deposition (ALD) technique, and their physical
and electrical properties were characterized for being applied as a gate insulator of low-temperature polysilicon thin-film transistors. ALD SiO2 films were deposited at 350–400 oC using alternating
exposures of SiH2Cl2 and O3/O2, and the characteristics of the deposited films were improved with increasing deposition temperature. The ALD films deposited at 400 oC exhibited integrity, surface
roughness and leakage current better than those of the conventional plasma-enhanced chemical vapor deposition (PECVD) films.
Type of Medium:
Online Resource
ISSN:
1662-9779
DOI:
10.4028/www.scientific.net/SSP.124-126
DOI:
10.4028/www.scientific.net/SSP.124-126.247
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2007
detail.hit.zdb_id:
2051138-3
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