In:
Review of Scientific Instruments, AIP Publishing, Vol. 79, No. 8 ( 2008-08-01)
Abstract:
We demonstrate successful operation of a scanning Hall probe microscope with a few micron-size resolution by using a silicon metal-oxide semiconductor field-effect transistor (Si-MOSFET) Hall bar, which is designed to improve not only the mechanical strength but also the temperature stability. The Si-MOSFET micro-Hall probe is cheaper than the current micro-Hall probes and is found to be as sensitive as a micro-Hall probe with GaAs/AlGaAs heterostructure or an epitaxial InSb two-dimensional electron gas. This was used to magnetically image the surface of a Sm2Co17 permanent magnet during the magnetization reversal process as a function of an external magnetic field below 1.5 T. This revealed firm evidence of the presence of the inverse magnetic seed as theoretically predicted earlier. Magnetically pinned centers, with a typical size 80 μm, are observed to persist even under a high magnetic field, clearly indicating the robustness of the Si Hall probe against the field application as well as the repetition of the measurement.
Type of Medium:
Online Resource
ISSN:
0034-6748
,
1089-7623
Language:
English
Publisher:
AIP Publishing
Publication Date:
2008
detail.hit.zdb_id:
209865-9
detail.hit.zdb_id:
1472905-2
SSG:
11
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