In:
physica status solidi c, Wiley, Vol. 5, No. 9 ( 2008-07), p. 3048-3050
Abstract:
AlN layers were directly grown on sapphire substrates with slightly different miscut angles from the c‐plane by metalorganic vapor phase epitaxy at 1300 °C. By X‐ray diffraction analysis, the structural quality was found to improve with the increase in substrate off‐angle. When the substrate off‐angle was 0.5°, the X‐ray rocking curve (XRC) full widths at half maximum (FWHMs) of symmetric and asymmetric planes were 170 and 550 arcsec, respectively. At smaller off‐angle, XRC‐FWHMs were wider. When the substrate off‐angle was zero, the XRC‐FWHM was considerably inferior to that on 0.5o‐off‐angle sapphire. The surface morphology was investigated. Atomic steps were observed on the substrates with a small misorientation. In contrast, macro steps appeared on larger‐off‐angle sapphire substrates. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Type of Medium:
Online Resource
ISSN:
1862-6351
,
1610-1642
DOI:
10.1002/pssc.200779226
Language:
English
Publisher:
Wiley
Publication Date:
2008
detail.hit.zdb_id:
2105580-4
detail.hit.zdb_id:
2102966-0
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