In:
Journal of Applied Physics, AIP Publishing, Vol. 97, No. 9 ( 2005-05-01)
Abstract:
The lateral carrier migration in a structure with InAs quantum dots (QDs) imbedded in a Ga0.85In0.15As quantum well grown on a GaAs substrate is investigated by confocal microscopy in a temperature range from 80 to 300K. Carrier spreading is measured by recording the ground and the first excited QD state emission. Carrier migration seems to be dominated by the diffusion in the GaAs barrier. The characteristic length of this transport phenomenon is 1.5μm at 80K. The characteristic migration length shows a linear increase with temperature up to a value of 1.7μm at 150K and then it remains constant up to 300K. The excited-state emission is spread in a spot with a smaller radius (1.0–1.2μm) and it has the same temperature dependence of the spreading distance as the characteristic migration length of carriers that recombine in the ground state.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2005
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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